ICP1137-1-110I


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Manufacturer: Microchip
Mfg #: ICP1137-1-110I
Richardson RFPD #: ICP1137-1-110I
Description: RF & MW Power Amplifier
Datasheet ICP1137-1-110I Data Sheet
EDA/CAD Models

ICP1137 is a 2-stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1137 operates from 2 GHz to 18 GHz with 37 dBm output power, 20% PAE, and 18 dB small signal gain. ICP1137 is well suited to commercial, test and measurement, and defense applications.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2000
Maximum Frequency (MHz) 18000
Gain (dB) 18
Gain Flatness (dB)
Efficiency (%) 20
Supply Voltage (V) 24
P1dB (dBm)
Psat (W) 5
PAvg (W)
Package Type Die

Datasheets

  ICP1137

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