ICP1937-1-110I


Stock Availability: 0

Manufacturer: Microchip
Mfg #: ICP1937-1-110I
Richardson RFPD #: ICP1937-1-110I
Description: RF & MW Power Amplifier
Datasheet ICP1937-1-110I Data Sheet
EDA/CAD Models

MICROCHIP’s ICP1937 is a three stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. The PA operates from 17-21GHz with 37dBm output power, 34% PAE and 28dB small signal gain. The die has integrated DC blocking capacitors and is matched to 50 Ohms on the RF input and output ports. The operating frequency provides flexible operation for a variety of applications including satellite and point to point radio.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 17200
Maximum Frequency (MHz) 21200
Gain (dB) 28
Gain Flatness (dB)
Efficiency (%) 34
Supply Voltage (V) 24
P1dB (dBm)
Psat (W) 5
PAvg (W)
Package Type Die

Datasheets

  ICP1937

Stock

Request Quote for Lead Time

Min/Mult: 5/1

Quote Required



Please notify me when stock becomes available!