INN040LA015A
Stock Availability: 455
| Manufacturer: | Innoscience |
|---|---|
| Mfg #: | INN040LA015A |
| Richardson RFPD #: | INN040LA015A |
| Description: | GaN Power Transistor |
| Min/Mult: | 1 |
| Datasheet |
INN040LA015A 
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| EDA/CAD Models |
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Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCLGA with 5 mm x 4 mm package size.
Features
- GaN-on-Silicon E-mode HEMT technology
- Very low gate charge
- Ultra-low on resistance
- Zero reverse recovery charge
Applications
- Battery Charger
- Battery Management System
- Notebook
- Industry
Datasheets