Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in En-FCQFN with 3.0 mm x 5.0 mm package size
Features
- GaN-on-Silicon E-mode HEMT technology
- Very low gate charge
- Ultra-low on resistance
- Very small footprint
Applications
- High frequency DC-DC converter
- BMS protection
- RF envelope tracking
- PC charger
- Mobile power bank
- Motor driver
