INN100EQ025A
Stock Availability: 0
| Manufacturer: | Innoscience |
|---|---|
| Mfg #: | INN100EQ025A |
| Richardson RFPD #: | INN100EQ025A |
| Description: | GaN Power Transistor |
| Min/Mult: | 2,500/1 |
| Datasheet |
INN100EQ025A 
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| EDA/CAD Models |
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Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in En-FCQFN with 3.0 mm x 5.0 mm package size
Features
- GaN-on-Silicon E-mode HEMT technology
- Very low gate charge
- Ultra-low on resistance
- Very small footprint
Applications
- High frequency DC-DC converter
- BMS protection
- RF envelope tracking
- PC charger
- Mobile power bank
- Motor driver
Datasheets
Please notify me when stock becomes available!