INN100W032A

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INN100W032A Innoscience
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Innoscience
Mfg #: INN100W032A
Richardson RFPD #: INN100W032A
Description: GaN Power Transistor
Min/Mult: 1
Datasheet INN100W032A Data Sheet
EDA/CAD Models

Currently not available for sale in the U.S.

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in WLCSP with 3.5 mm x 2.13 mm package size.

Features

  • GaN-on-Silicon E-mode HEMT technology
  • Very low gate charge
  • Ultra-low on resistance
  • Very small package size
  • Zero reverse recovery charge

Applications

  • Synchronous rectification
  • Class-D audio
  • High frequency DC-DC converter
  • Communication base station
  • Motor Driver

Key Attributes Value Search Similar
Voltage (V) 100
Current (A) 60
Rds(on) (mΩ) 2.4
Package Type WLCSP
Dimensions (mm) 3.5 mm x 2.13 mm

Datasheets

  20230315inn100w032adatasheetrev201.120solder20bar

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