INN100W14

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INN100W14 Innoscience
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Innoscience
Mfg #: INN100W14
Richardson RFPD #: INN100W14
Description: GaN Power Transistor
Min/Mult: 1
Datasheet INN100W14 Data Sheet
EDA/CAD Models

Currently not available for sale in the U.S.

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) with ultra-low on resistance.

Features

  • GaN-on-Silicon E-mode HEMT technology
  • Dual Channels, Common Source
  • Ultra High Switching Frequency
  • Fast and Controllable Fall and Rise Time
  • Ultra-low on Resistance

Applications

  • Point of Load Converters
  • Class-D audio
  • Lidar Application
  • Envelope Tracking Power Supplies
  • Pulsed Power Applications

Key Attributes Value Search Similar
Voltage (V) 100
Current (A) 7
Rds(on) (mΩ) 19
Package Type WLCSP
Dimensions (mm) 1.58 mm x 3.58 mm

Datasheets

  INN100W14

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