INN100W14
Stock Availability: 470
| Manufacturer: | Innoscience |
|---|---|
| Mfg #: | INN100W14 |
| Richardson RFPD #: | INN100W14 |
| Description: | GaN Power Transistor |
| Min/Mult: | 1 |
| Datasheet |
INN100W14 
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| EDA/CAD Models |
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Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) with ultra-low on resistance.
Features
- GaN-on-Silicon E-mode HEMT technology
- Dual Channels, Common Source
- Ultra High Switching Frequency
- Fast and Controllable Fall and Rise Time
- Ultra-low on Resistance
Applications
- Point of Load Converters
- Class-D audio
- Lidar Application
- Envelope Tracking Power Supplies
- Pulsed Power Applications
Datasheets