INN150LA070A

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INN150LA070A Innoscience
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Innoscience
Mfg #: INN150LA070A
Richardson RFPD #: INN150LA070A
Description: GaN Power Transistor
Min/Mult: 1
Datasheet INN150LA070A Data Sheet
EDA/CAD Models

Currently not available for sale in the U.S.

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in Flip chip LGA (FCLGA) with 3.2 mm x 2.2 mm package size

Features

  • GaN-on-Silicon E-mode HEMT technology
  • Very low gate charge
  • Ultra-low on resistance
  • Very small package size
  • Zero reverse recovery charge

Applications

  • Synchronous rectification
  • Class-D audio
  • High Frequency DC-DC converter
  • Communication base station
  • Motor driver

Key Attributes Value Search Similar
Voltage (V) 150
Current (A) 28
Rds(on) (mΩ) 5.6
Package Type LGA
Dimensions (mm) 2.2 mm x 3.2 mm

Datasheets

  INN150LA070A

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