INN150LA070A
Stock Availability: 432
| Manufacturer: | Innoscience |
|---|---|
| Mfg #: | INN150LA070A |
| Richardson RFPD #: | INN150LA070A |
| Description: | GaN Power Transistor |
| Min/Mult: | 1 |
| Datasheet |
INN150LA070A 
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| EDA/CAD Models |
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Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in Flip chip LGA (FCLGA) with 3.2 mm x 2.2 mm package size
Features
- GaN-on-Silicon E-mode HEMT technology
- Very low gate charge
- Ultra-low on resistance
- Very small package size
- Zero reverse recovery charge
Applications
- Synchronous rectification
- Class-D audio
- High Frequency DC-DC converter
- Communication base station
- Motor driver
Datasheets