INN650D350A


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Innoscience
Mfg #: INN650D350A
Richardson RFPD #: INN650D350A
Description: GaN Power Transistor
Datasheet INN650D350A Data Sheet
EDA/CAD Models

Please Note: These products are available for global purchase with the exception of Germany. We are unable to process or ship orders for these items to addresses within Germany.

Currently not available for sale in the U.S.

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size

Features

  • Enhancement mode transistor-Normally off power switch
  • Ultra high switching frequency
  • No reverse-recovery charge
  • Low gate charge, low output charge
  • Qualified for industrial applications according to JEDEC Standards
  • ESD safeguard
  • RoHS, Pb-free, REACH-compliant

Applications

  • DCM/BCM PFC
  • AHB/LLC/QR Flyback/ACF DCDC converter
  • LED driver
  • Fast battery charger
  • Notebook/AIO adaptor
  • Desktop PC/ATX/TV/power tool power supply

Key Attributes Value Search Similar
Voltage (V) 650
Current (A) 10
Rds(on) (mΩ) 270
Package Type DFN
Dimensions (mm) 8 mm x 8 mm

Datasheets

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