INN80LA01
Stock Availability: 500
| Manufacturer: | Innoscience |
|---|---|
| Mfg #: | INN80LA01 |
| Richardson RFPD #: | INN80LA01 |
| Description: | GaN Power Transistor |
| Min/Mult: | 1 |
| Datasheet |
INN80LA01 
|
| EDA/CAD Models |
|
Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in LGA with 2.3 mm x 3.3 mm package size
Features
- AEC-Q101 Qualified
- Ultra-High Switching Frequency and Ultra-Low Rds(on)
- Fast and Controllable Fall and Rise Time
- Zero Reverse Recovery Loss
Applications
- LIDAR Application
- Synchronous Rectification and Class D Audio
- Envelope Tracking Power Supplies
- High Frequency DC-DC Converter
Datasheets