MA4AGFCP910


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Manufacturer: MACOM Technology Solutions
Mfg #: MA4AGFCP910
Richardson RFPD #: MA4AGFCP910
Description: RF PIN Diode
Min/Mult: 1,000/1
Datasheet MA4AGFCP910 Data Sheet
EDA/CAD Models

Single Diode Configuration: MACOM's MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC product, (0.1ps) and 2-3ns switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly. The ultra low capacitance of the MA4AGP907 and MA4AGFC910 allows their use through millimeter frequencies for RF switches and switched phase shifter applications. The diodes are designed for use in pulsed or CW applications, where single digit ns switching speed is required. For surface mount assembly, the low capacitance of these switches make them ideal for use in microwave multi-throw switch assemblies, where the series capacitance of each ""off"" port adversely loads the input and affects VSWR.

Key Attributes Value Search Similar
Diode Configuration Single Diode
Minimum Frequency (MHz) 100
Maximum Frequency (MHz) 40000
Vr (Reverse Voltage) (V) 75
Total Capacitance (pF) 0.018
Rs (Series Resistance) (Ω) 5.2
Package Type Flip Chip
Mounting Style

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