Single Diode Configuration: MA4GP907 is a Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, (0.1 ps) and 2 ns switching characteristics. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling. The 25 fF capacitance of the MA4GP907 allows use through mm wave switch and switched phase shifter applications. This diode is designed for use in pulsed or CW applications, where single digit ns switching speed is required. For surface mount assembly, the low capacitance of the MA4GP907 makes it ideal for use in microwave multithrow switch assemblies, where the series capacitance of each off port adversely loads the input and affects VSWR.
