MAGB-103340-015B0P

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MAGB-103340-015B0P MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: MAGB-103340-015B0P
Richardson RFPD #: MAGB-103340-015B0P
Description: RF Power Transistor
Min/Mult: 1
Datasheet MAGB-103340-015B0P Data Sheet
EDA/CAD Models

The MAGB-103340-015B0P is a wideband GaN HEMT D-mode amplifier designed for base station applications and optimized for 3.3 - 4.0 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 15 W (42 dBm) in a 4 mm DFN package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3300
Maximum Frequency (MHz) 4000
Pout (W) 15
Gain (dB) 16.8
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 53
P1dB (W)
Psat (W) 14.79
Thermal Resistance (°C/W) 14
Package Name DFN 4x4
Package Type Plastic SMT

Change Notice

  MACOM_PCN-01575

  MACOM_PCN-01950

Datasheets

  MAGB-103340-015

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