MAGB-103740-008B0P

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MAGB-103740-008B0P MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: MAGB-103740-008B0P
Richardson RFPD #: MAGB-103740-008B0P
Description: RF Power Transistor
Min/Mult: 1
Datasheet MAGB-103740-008B0P Data Sheet
EDA/CAD Models

The MAGB-103740-008B0P is a wideband GaN HEMT D-mode amplifier designed for base station applications and optimized for 3.7 - 4.0 GHz modulated signal operation. This device supports pulsed and linear operation with peak output levels to 8 W (39 dBm) in a 4x4mm DFN package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3700
Maximum Frequency (MHz) 4000
Pout (W) 8
Gain (dB) 18.5
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 51
P1dB (W)
Psat (W) 5.89
Thermal Resistance (°C/W) 27.3
Package Name DFN 4x4
Package Type Plastic SMT

Change Notice

  MACOM_PCN-01575

Datasheets

  MAGB-103740-008

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