MAGX-100027-300CTP

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MAGX-100027-300CTP MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: MAGX-100027-300CTP
Richardson RFPD #: MAGX-100027-300CTP
Description: RF Power Transistor
Min/Mult: 1
Datasheet MAGX-100027-300CTP Data Sheet
EDA/CAD Models

The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 300 W (54.8 dBm) in a plastic package.

The MAGX-100027-300CTP is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 2700
Pout (W) 300
Gain (dB) 14.5
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 57.5
P1dB (W)
Psat (W) 300
Thermal Resistance (°C/W) 0.56
Package Name TO-272S-4I
Package Type Plastic Flangeless

Datasheets

  MAGX-100027-300C0P

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