MAPC-C22650-DPTR2


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: MAPC-C22650-DPTR2
Richardson RFPD #: MAPC-C22650-DPTR2
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet MAPC-C22650-DPTR2 Data Sheet
EDA/CAD Models

The MAPC-C22650-DP is a GaN on Silicon Carbide HEMT Amplifier designed for asymmetrical Doherty applications. The device is optimized for the frequency band of 1805 to 2170 MHz. This product is housed in an over-molded TO-package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1805
Maximum Frequency (MHz) 2170
Gain (dB) 16.4
Gain Flatness (dB) 0.7
Efficiency (%) 59.4
Supply Voltage (V) 52
P1dB (dBm)
Psat (W)
PAvg (W) 75.86
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