MHT1803A

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MHT1803A NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MHT1803A
Richardson RFPD #: MHT1803A
Description: RF Power Transistor
Min/Mult: 240/1
Datasheet MHT1803A Data Sheet
EDA/CAD Models

The MHT1803A 300 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating from 1.8 to 50 MHz.

Features
  • Characterized from 30 to 50 V
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • 150 C case operating temperature
  • 175 C die temperature capability
  • RoHS compliant
Applications
  • Consumer cooking
  • Commercial cooking

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 50
Pout (W) 300
Gain (dB) 28.2
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 79
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.55
Package Name TO-247-3L
Package Type Plastic Through-Hole

Change Notice

  NXP_PCN_202504007I

Datasheets

  pgurl_6749137746424402

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Unit Price:
240:  $68.0000
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