MHT2012NT1

MHT2012NT1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MHT2012NT1
Richardson RFPD #: MHT2012NT1
Description: RF & MW Power Amplifier
Min/Mult: 1,000/1000
Datasheet MHT2012NT1 Data Sheet
EDA/CAD Models

This 12.5 W CW RF power integrated circuit is designed for RF energy applications operating in the 2450 MHz ISM band.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 2400
Maximum Frequency (MHz) 2500
Gain (dB) 29.7
Gain Flatness (dB)
Efficiency (%) 50.5
Supply Voltage (V) 28
P1dB (dBm) 40.68
Psat (W)
PAvg (W)
Package Type PQFN

Change Notice

  NXP_PCN_202504007I

  NXP_PCN_202512006DN

Datasheets

  MHT2012N Datasheet

Full Reel

 Request Quote for Lead Time
Unit Price: Pricing in (USD)
1000:  $15.4700

Must order in multiple of 1000

Cut Tape

 Request Quote for Lead Time
Unit Price: Pricing in (USD)
1000:  $15.8500