MHV5IC1810NR2

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MHV5IC1810NR2 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MHV5IC1810NR2
Richardson RFPD #: MHV5IC1810NR2
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet MHV5IC1810NR2 Data Sheet
EDA/CAD Models

The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1805
Maximum Frequency (MHz) 1990
Gain (dB) 29
Gain Flatness (dB)
Efficiency (%) 29
Supply Voltage (V) 28
P1dB (dBm) 42
Psat (W)
PAvg (W)
Package Type PFP

Datasheets

  MHV5IC1810N

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