MMA041PP5


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MMA041PP5
Richardson RFPD #: MMA041PP5
Description: RF & MW LNA
Min/Mult: 1
Datasheet MMA041PP5 Data Sheet
EDA/CAD Models

MMA041PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier in a leadless 5 mm × 5 mm surface-mount package that operates between DC and 25 GHz. It is ideal for test instrumentation and communications infrastructure applications. The amplifier provides a flat gain of 17 dB, 2.5 dB noise figure, and 21 dBm of output power at 1 dBm gain compression while requiring only 150 mA from an 7 V supply. Output IP3 is typically 35 dBm. The MMA041PP5 amplifier features RF I/Os that are internally matched to 50 Ohm. It is also available in die form as the MMA041AA.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 25000
Gain (dB) 17
Gain Flatness (dB) 0.5
Noise Figure (dB) 2.5
P1dB (dBm) 19
Output IP3 (dBm) 36
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 7
Current (mA) 150
Package Type QFN

Datasheets

  MMA041PP5

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Pricing in (USD)

Unit Price:
1:  $204.3400
100:  $199.0300
500:  $193.9900


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