MMRF1004GNR1


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMRF1004GNR1
Richardson RFPD #: MMRF1004GNR1
Description: RF Power Transistor
Min/Mult: 500/1
Datasheet MMRF1004GNR1 Data Sheet
EDA/CAD Models

N-Channel Enhancement-Mode Lateral MOSFETs. Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1600
Maximum Frequency (MHz) 2200
Pout (W) 1
Gain (dB) 15.5
Supply Voltage (V) 28
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 15
P1dB (W) 10
Psat (W)
Thermal Resistance (°C/W) 2.3
Package Name TO-270G-2
Package Type Plastic Gull Wing

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