MMRF1004GNR1

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MMRF1004GNR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMRF1004GNR1
Richardson RFPD #: MMRF1004GNR1
Description: RF Power Transistor
Datasheet MMRF1004GNR1 Data Sheet
EDA/CAD Models

N-Channel Enhancement-Mode Lateral MOSFETs. Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1600
Maximum Frequency (MHz) 2200
Pout (W) 1
Gain (dB) 15.5
Supply Voltage (V) 28
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 15
P1dB (W) 10
Psat (W)
Thermal Resistance (°C/W) 2.3
Package Name TO-270G-2
Package Type Plastic Gull Wing

Other Attributes Value
Output Voltage (V) 5

Application Notes

  Freescale Solder Reflow Attach Method

  Freescale Clamping of High Power RF Transistors and RFICs

  Freescale Thermal Measurement Methodology of RF Power Amplifiers

  Freescale Using Data Sheet Impedances for RF LDMOS Devices

Change Notice

  NXP_PCN_202504007I

  NXP_PCN_202512006DN

Datasheets

  MMRF1004N

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