MMRF1314GSR5

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MMRF1314GSR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMRF1314GSR5
Richardson RFPD #: MMRF1314GSR5
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet MMRF1314GSR5 Data Sheet
EDA/CAD Models

This RF power device is designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The device is suitable for use in pulse applications and is ideal for use in high power military and commercial L-Band radar applications.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1200
Maximum Frequency (MHz) 1400
Pout (W) 1000
Gain (dB) 17.7
Supply Voltage (V) 52
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 52.1
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.018
Package Name NI-1230GS-4L
Package Type Ceramic Gull Wing

Datasheets

  MMRF1314H

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