MMRF1320GNR1

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MMRF1320GNR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMRF1320GNR1
Richardson RFPD #: MMRF1320GNR1
Description: RF Power Transistor
Min/Mult: 500/1
Datasheet MMRF1320GNR1 Data Sheet
EDA/CAD Models

This high ruggedness device is designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output design allows wide frequency range utilization, from 1.8 to 600 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 150
Gain (dB) 26.1
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 70.3
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.21
Package Name TO-270WBG-4
Package Type Plastic Gull Wing

Change Notice

  NXP_PCN_202504007I

Datasheets

  MMRF1320N

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