MMZ25333BT1


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMZ25333BT1
Richardson RFPD #: MMZ25333BT1
Description: RF & MW Power Amplifier
Min/Mult: 1,000/1
Datasheet MMZ25333BT1 Data Sheet
EDA/CAD Models

The MMZ25333B is a versatile 3--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final--stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 40 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4x4 surface mount package.

Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 1500
Maximum Frequency (MHz) 2700
Gain (dB) 42.6
Gain Flatness (dB)
Efficiency (%)
Supply Voltage (V) 5
P1dB (dBm) 33
Psat (W)
PAvg (W)
Package Type QFN

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Datasheets

  MMZ25333B

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