MRF101BN


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRF101BN
Richardson RFPD #: MRF101BN
Description: RF Power Transistor
Min/Mult: 250/250
Datasheet MRF101BN Data Sheet
EDA/CAD Models

This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits high performance up to 250 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 250
Pout (W) 100
Gain (dB) 23
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 79.5
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 1.1
Package Name TO-220-3L
Package Type Plastic Through-Hole

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Mfg. Stock: 10,000 Units

Unit Price: Pricing in (USD)
250:  $24.7000

Must order in multiple of 250

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