MRF6V12250HR5


Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRF6V12250HR5
Richardson RFPD #: MRF6V12250HR5
Description: RF Power Transistor
Min/Mult: 50/50
Datasheet MRF6V12250HR5 Data Sheet
EDA/CAD Models

RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 960
Maximum Frequency (MHz) 1215
Pout (W) 275
Gain (dB) 20.3
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 65.5
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.08
Package Name NI-780
Package Type Ceramic Flanged

Change Notice
Datasheets

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Mfg. Stock: 10,000 Units

Unit Price: Pricing in (USD)
50:  $571.5400

Must order in multiple of 50

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Unit Price: Pricing in (USD)
50:  $585.7300