MRF6VP121KHR5


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRF6VP121KHR5
Richardson RFPD #: MRF6VP121KHR5
Description: RF Power Transistor
Min/Mult: 1
Datasheet MRF6VP121KHR5 Data Sheet
EDA/CAD Models

RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 965
Maximum Frequency (MHz) 1215
Pout (W) 1000
Gain (dB) 20
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 56
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.02
Package Name NI-1230
Package Type Ceramic Flanged

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Unit Price:
1:  $629.2900
10:  $612.7300
25:  $597.0200
50:  $581.3700
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