MRFE6VP61K25HSR5

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MRFE6VP61K25HSR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP61K25HSR5
Richardson RFPD #: MRFE6VP61K25HSR5
Description: RF Power Transistor
Datasheet MRFE6VP61K25HSR5 Data Sheet
EDA/CAD Models

This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. It's unmatched input and output design allows wide frequency range utilization, between 1.8 and 600 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 1250
Gain (dB) 22.9
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 74.6
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.15
Package Name NI-1230
Package Type Ceramic Flangeless

Other Attributes Value
Isolation (kVDC) 3

Change Notice

  NXP_PCN_202504008I

  NXP_PCN_202512006DN

  NXP_PCN_202512006DNU01

Datasheets

  MRFE6VP61K25H

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