MSC025SMA120B4

Stock Availability: 114

MSC025SMA120B4 Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSC025SMA120B4
Richardson RFPD #: MSC025SMA120B4
Description: Silicon Carbide MOSFETs
Min/Mult: 1
Datasheet MSC025SMA120B4 Data Sheet
EDA/CAD Models

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC025SMA120B4 device is a 1200 V, 25 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense.

Features
  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant
Benefits
  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership
Applications
  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 103
Rds(on) (mΩ) 25
Configuration Single SiC MOSFET
Package Type TO-247-4L

Change Notice

  Microchip Change Notice ASER-08CMEO630

  Microchip_PCN_CENO-03DKHD890

  Microchip_PCN_BLAS-16DMDR130

  Microchip_PCN_CENO-03DKHD890_9Jun2025

Datasheets

  MSC025SMA120B4

Stock

 Ready for Immediate Shipment
Stock: 114 Units

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 Pricing in (USD)
Unit Price:
1:  $33.9900
50:  $33.1000
100:  $32.6800
250:  Get Quote