3300V Silicon Carbide (SiC) MOSFET
MOSFET-SiC-3300V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.
Features- Low capacitances and low gate charge
- Fast switching speed due to low internal gage resistance (ESR)
- Stable operation at high junction temperature at 175 degrees Celsius
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS Compliant
Datasheets
