MSC030SDA330B

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MSC030SDA330B Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSC030SDA330B
Richardson RFPD #: MSC030SDA330B
Description: Silicon Carbide Diode
Min/Mult: 30/1
Datasheet MSC030SDA330B Data Sheet
EDA/CAD Models

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC030SDA330B device is a 3300 V, 30 A SiC SBD in a two-lead TO-247 package.

Features
  • No reverse recovery
  • Low forward voltage
  • Low leakage current
  • RoHS compliant
Benefits
  • High switching frequency
  • Low switching losses
  • Low noise (EMI) switching
  • Higher reliability systems
  • Increased system power density
Applications
  • Power factor correction (PFC)
  • Anti-parallel diode: Switch-mode power supply, Inverters/converters, Motor controllers
  • Freewheeling diode: Switch-mode power supply, Inverters/converters
  • Snubber/clamp diode

Key Attributes Value Search Similar
Voltage (V) 3300
Current (A) 62
Configuration Single
Package Type TO-247-2L

Change Notice

  Microchip_PCN_BLAS-10EBQB316

  Microchip_PCN_CENO-03DKHD890

  Microchip_PCN_CENO-03DKHD890_9Jun2025

Datasheets

  MSC030SDA330B

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