MSC035SMA070S


Stock Availability: 170

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSC035SMA070S
Richardson RFPD #: MSC035SMA070S
Description: Silicon Carbide MOSFETs
Min/Mult: 1
Datasheet MSC035SMA070S Data Sheet
EDA/CAD Models

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC035SMA070S device is a 700 V, 35 mOhm SiC MOSFET in a TO-268 (D3PAK) package.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission & distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution

Key Attributes Value Search Similar
Voltage (V) 700
Current (A) 65
Rds(on) (mΩ) 35
Configuration Single SiC MOSFET
Package Type TO-268

Stock

Ready for Immediate Shipment

Stock: 170 Units

Order

Pricing in (USD)

Unit Price:
1:  $9.5700