MSC040SMA120B4


Stock Availability: 134

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSC040SMA120B4
Richardson RFPD #: MSC040SMA120B4
Description: Silicon Carbide MOSFETs
Min/Mult: 1
Datasheet MSC040SMA120B4 Data Sheet
EDA/CAD Models

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC040SMA120B4 device is a 1200 V, 40 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense.

Features
  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant
Benefits
  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership
Applications
  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 66
Rds(on) (mΩ) 40
Configuration Single SiC MOSFET
Package Type TO-247-4L

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Stock: 134 Units

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1:  $11.6300