MSC060SMA070B

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MSC060SMA070B Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSC060SMA070B
Richardson RFPD #: MSC060SMA070B
Description: Silicon Carbide MOSFETs
Min/Mult: 60/1
Datasheet MSC060SMA070B Data Sheet
EDA/CAD Models

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070B device is a 700 V, 60 mOhm SiC MOSFET in a TO-247 package.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter/compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution

Key Attributes Value Search Similar
Voltage (V) 700
Current (A) 39
Rds(on) (mΩ) 60
Configuration Single SiC MOSFET
Package Type TO-247-3L

Change Notice

  Microchip Change Notice ASER-08CMEO630

  Microchip_PCN_DSNO-10QNWO017

  Microchip_PCN_CENO-03DKHD890

  Microchip_PCN_BLAS-16DMDR130

  Microchip_PCN_CENO-03DKHD890_9Jun2025

Datasheets

  MSC060SMA070B

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 Pricing in (USD)
Unit Price:
60:  $5.3700
100:  $5.2900
250:  Get Quote


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