MSC060SMA070B4
Stock Availability: 42
| Manufacturer: | Microchip |
|---|---|
| Mfg #: | MSC060SMA070B4 |
| Richardson RFPD #: | MSC060SMA070B4 |
| Description: | Silicon Carbide MOSFETs |
| Min/Mult: | 1 |
| Datasheet |
MSC060SMA070B4 
|
| EDA/CAD Models |
|
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070B4 device is a 700 V, 60 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense.
Features- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = +175C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS Compliant
- High efficiency to enable lighter, more compact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need of external freewheeling diode
- Lower system cost of ownership
- PV inverter, converter and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution