MSC2X30SDA170J

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MSC2X30SDA170J Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSC2X30SDA170J
Richardson RFPD #: MSC2X30SDA170J
Description: Silicon Carbide Diode
Min/Mult: 20/1
Datasheet MSC2X30SDA170J Data Sheet
EDA/CAD Models

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X30SDA170J is a dual 1700 V, 30 A SiC SBD device in a SOT-227 package.

Features
  • No reverse recovery
  • Low forward voltage
  • Low leakage current
  • Avalanche-energy rated
  • RoHS compliant
  • Isolated voltage to 2500 V
Benefits
  • Outstanding performance at high-frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • RoHS compliant
Applications
  • Power factor correction (PFC)
  • Switch-mode power supply
  • Inverters/converters
  • Motor controllers
  • Snubber/clamp diode

Key Attributes Value Search Similar
Voltage (V) 1700
Current (A) 30
Configuration Dual anti-parallel
Package Type SOT-227

Change Notice

  Microchip_PCN_BLAS-16DMDR130

  Microchip_PCN_MAAN-28XKXD729

Datasheets

  MSC2X30SDA170J

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 Pricing in (USD)
Unit Price:
20:  $64.5200
50:  $62.8400
100:  $62.0400
250:  Get Quote


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