MSC750SMA170B4

Stock Availability: 74

MSC750SMA170B4 Microchip
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSC750SMA170B4
Richardson RFPD #: MSC750SMA170B4
Description: Silicon Carbide MOSFETs
Min/Mult: 1
Datasheet MSC750SMA170B4 Data Sheet
EDA/CAD Models

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170B4 device is a 1700 V, 750 mOhm SiC MOSFET in a TO-247 package with a source sense.

Features
  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant
Benefits
  • High efficiency to enable lighter/compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership
Applications
  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution

Key Attributes Value Search Similar
Voltage (V) 1700
Current (A) 7
Rds(on) (mΩ) 750
Configuration Single SiC MOSFET
Package Type TO-247-4L

Change Notice

  Microchip_PCN_CENO-03DKHD890

  Microchip_PCN_BLAS-16DMDR130

  Microchip_PCN_CENO-03DKHD890_9Jun2025

Datasheets

  MSC750SMA170B4

Stock

 Ready for Immediate Shipment
Stock: 74 Units

Order

 Pricing in (USD)
Unit Price:
1:  $3.7300