MSCC60AM23C4AG

Features

• Super junction MOSFET: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated, Very rugged
• SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• AlN substrate for improved thermal performance

Benefits

• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low Profile
• RoHS compliant

Applications

• Plasma and Induction heating
• Uninterruptible power supplies