MSCGLQ25X120CRTBL3NG
Stock Availability: 0
| Manufacturer: | Microchip |
|---|---|
| Mfg #: | MSCGLQ25X120CRTBL3NG |
| Richardson RFPD #: | MSCGLQ25X120CRTBL3NG |
| Description: | Power IGBT Transistor |
| Min/Mult: | 1 |
| Datasheet |
MSCGLQ25X120CRTBL3NG |
| EDA/CAD Models |
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The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module.
Features
- High-Speed IGBT 4
- Low voltage drop
- Low leakage current
- Low switching losses
- SiC Schottky diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
- Very low stray inductance
- Ultra low weight and profile
- Kelvin source for easy drive
- Si3N4 substrate with thick copper for improved thermal performance
- Internal thermistor for temperature monitoring
- Extended temperature range
Benefits
- Outstanding performance at high frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Solderable terminals both for power and signal for easy PCB mounting
- Very integrated power conversion system
- Low profile
- RoHS Compliant
Applications
- High reliability drive
- Medium and heavy drones
- Aircraft actuation systems
Datasheets
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