MSCSICMDD/REF1

This design is optimized to drive SiC devices at a high speed with desaturation protection. It is a base design that can be simplified depending upon the individual system requirements. Requires only a +24V power input.

• Adjustable -5V, +20V output gate drive.
• Galvanic isolation of more than 2000V on both gate drivers.
• Capable of 8W of gate drive power / side
• Peak output current of up to 30A
• Maximum switching frequency greater than 400KHz
• Single-ended or RS485/RS422 differential input gate control
• Shoot through (short-circuit) protection
• +/- 100KV/uS capability
• Programmable dead time protection
• Fault signaling
• Under voltage lockout protection