MSCSICMDD/REF1

Stock Availability: 0

MSCSICMDD/REF1 Microchip
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCSICMDD/REF1
Richardson RFPD #: MSCSICMDD/REF1
Description: Silicon Carbide Test/Evaluation Products
Min/Mult: 1
Datasheet MSCSICMDD/REF1 Data Sheet
EDA/CAD Models

This design is optimized to drive SiC devices at a high speed with desaturation protection. It is a base design that can be simplified depending upon the individual system requirements. Requires only a +24V power input.

  • Adjustable -5V, +20V output gate drive.
  • Galvanic isolation of more than 2000V on both gate drivers.
  • Capable of 8W of gate drive power / side
  • Peak output current of up to 30A
  • Maximum switching frequency greater than 400KHz
  • Single-ended or RS485/RS422 differential input gate control
  • Shoot through (short-circuit) protection
  • +/- 100KV/uS capability
  • Programmable dead time protection
  • Fault signaling
  • Under voltage lockout protection

Key Attributes Value Search Similar
Description 8W Dual SiC MOSFET ref design

Application Notes

  MSCSICMDD Application Note

Brochure

  Microsemi Dual SiC MOSFET Drive

Datasheets

  MSCSICMDD-REF1

Stock

 Request Quote for Lead Time

Quote Required


Please notify me when stock becomes available!