MSCSM70TLM10C3AG
Stock Availability: 0
| Manufacturer: | Microchip |
|---|---|
| Mfg #: | MSCSM70TLM10C3AG |
| Richardson RFPD #: | MSCSM70TLM10C3AG |
| Description: | Silicon Carbide MOSFET Modules |
| Min/Mult: | 1 |
| Datasheet |
MSCSM70TLM10C3AG 
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| EDA/CAD Models |
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The MSCSM70TLM10C3AG device is a 700V/241A, three level inverter silicon carbide (SiC) MOSFET power module.
Features- SiC Power MOSFET: Low RDS(on), High temperature performance
- SiC Schottky Diode (CR1 and CR2): Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
- Kelvin emitter for easy drive
- Low stray inductance
- High level of integration
- Aluminum Nitride (AlN) substrate for improved thermal performance
- High efficiency converter
- Stable temperature behavior
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance
- Low profile
- RoHS compliant
- Very rugged
- Uninterruptible power supplies
| Other Attributes | Value |
|---|---|
| Rds(on) (mΩ) | 7.5 |
Datasheets
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