MSCSM70VR1M10CTPAG

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MSCSM70VR1M10CTPAG Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCSM70VR1M10CTPAG
Richardson RFPD #: MSCSM70VR1M10CTPAG
Description: Silicon Carbide MOSFET Modules
Min/Mult: 1
Datasheet MSCSM70VR1M10CTPAG Data Sheet
EDA/CAD Models

Features
  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • SiC Schottky Diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature Independent switching behavior
    • Positive temperature coefficient on VF
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • Kelvin source for easy drive
  • Aluminum nitride (AlN) substrate for improved thermal performance
Benefits
  • High power and high efficiency rectifiers and converters
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals for power and signal, for easy PCB mounting
  • Low profile
  • RoHS compliant
Applications
  • Uninterruptible power supplies
  • Switched Mode power supplies
  • Power factor correction

Key Attributes Value Search Similar
Voltage (V) 700
Current (A) 189
Configuration Triple Vienna Rectifier
Package Type SP6P

Other Attributes Value
Rds(on) (mΩ) 7.5

Datasheets

  MSCSM70VR1M10CP

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