MW7IC915NT1

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MW7IC915NT1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MW7IC915NT1
Richardson RFPD #: MW7IC915NT1
Description: RF & MW Power Amplifier
Min/Mult: 1,000/1
Datasheet MW7IC915NT1 Data Sheet
EDA/CAD Models

RF LDMOS Wideband Integrated Power Amplifier. The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 728
Maximum Frequency (MHz) 960
Gain (dB) 38
Gain Flatness (dB) 0.1
Efficiency (%) 17.4
Supply Voltage (V) 28
P1dB (dBm) 41.9
Psat (W)
PAvg (W) 1.6
Package Type Surface Mount

Change Notice

  NXP_PCN_202504008I

Datasheets

  MW7IC915N

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