The NPA1006A is a GaN on silicon amplifier
optimized for 20 - 1000 MHz operation. This
amplifier has been designed for saturated and linear
operation with output levels to 12.5 W (41 dBm)
assembled in a lead-free 6 x 5 mm 8-lead PDFN
plastic package.
The NPA1006A is ideally suited for general purpose
narrowband to broadband applications in test and
measurement, defense communications, land
mobile radio and wireless infrastructure.
