NPT1012B

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NPT1012B MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: NPT1012B
Richardson RFPD #: NPT1012B
Description: RF Power Transistor
Min/Mult: 30/1
Datasheet NPT1012B Data Sheet
EDA/CAD Models

Gallium Nitride 28V, 25W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 4000
Pout (W) 25
Gain (dB) 13
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 65
P1dB (W) 19.95
Psat (W) 25.12
Thermal Resistance (°C/W) 4
Package Name
Package Type Ceramic Flanged

Datasheets

  105306840861671nds-02520rev20320npt1012

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