PTVA127002EV-V1-R250

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PTVA127002EV-V1-R250 MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: PTVA127002EV-V1-R250
Richardson RFPD #: PTVA127002EV-V1-R250
Description: RF Power Transistor
Min/Mult: 1
Datasheet PTVA127002EV-V1-R250 Data Sheet
EDA/CAD Models

The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1200
Maximum Frequency (MHz) 1400
Pout (W) 700
Gain (dB) 16
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 300
Duty Cycle 12
Efficiency (%) 56
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.36
Package Name H-36275-4
Package Type Ceramic Flanged

Datasheets

  ptva127002ev

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