PXAD184218FV-V1-R0

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PXAD184218FV-V1-R0 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: PXAD184218FV-V1-R0
Richardson RFPD #: PXAD184218FV-V1-R0
Description: RF Power Transistor
Min/Mult: 1
Datasheet PXAD184218FV-V1-R0 Data Sheet
EDA/CAD Models

The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with advanded LDMOS process, this device provides excellent thermal performance and superior reliability.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1805
Maximum Frequency (MHz) 1880
Pout (W) 60
Gain (dB) 16
Supply Voltage (V) 28
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 51.5
P1dB (W)
Psat (W) 420
Thermal Resistance (°C/W) 0.514
Package Name H-37275G-6/2
Package Type Ceramic Flangeless

Datasheets

  pxad184218fv

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