PXAD214218FV-V1-R0

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PXAD214218FV-V1-R0 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: PXAD214218FV-V1-R0
Richardson RFPD #: PXAD214218FV-V1-R0
Description: RF Power Transistor
Min/Mult: 1
Datasheet PXAD214218FV-V1-R0 Data Sheet
EDA/CAD Models

The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 2110
Maximum Frequency (MHz) 2170
Pout (W) 56
Gain (dB) 16
Supply Voltage (V) 28
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 48.7
P1dB (W)
Psat (W) 436
Thermal Resistance (°C/W) 0.44
Package Name H-37275G-6/2
Package Type Ceramic Flangeless

Datasheets

  pxad214218fc

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