PXAE183708NB-V1-R0

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PXAE183708NB-V1-R0 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: PXAE183708NB-V1-R0
Richardson RFPD #: PXAE183708NB-V1-R0
Description: RF Power Transistor
Min/Mult: 1
EDA/CAD Models

The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1805
Maximum Frequency (MHz) 1880
Pout (W) 54
Gain (dB) 16
Supply Voltage (V) 28
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 50.5
P1dB (W) 320
Psat (W) 430
Thermal Resistance (°C/W) 0.63
Package Name PG-HB2SOF-8-1
Package Type Plastic Flangeless

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