RAPIDRF-35D35


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: RAPIDRF-35D35
Richardson RFPD #: RAPIDRF-35D35
Description: RF Front End System Board
Min/Mult: 1
Datasheet RAPIDRF-35D35 Data Sheet
EDA/CAD Models

NXP’s RapidRF front-end designs for 5G infrastructure integrate an RF power amplifier, Rx LNA with T/R switch, a circulator and a bias controller in a compact footprint. They incorporate a coupler for DPD feedback and are to be used with digital pre-distortion. RapidRF reference boards are ideal for 5G radio units requiring 2.5 to 5 Watts (34-37 dBm) average transmit power at the antenna. Versions for different bands use a common PCB layout, simplifying both design and manufacturing for faster time-to-market.

The RAPIDRF-35D35 is based on AFSC5G35D35T2 PA Module, AFLP5G35645T6 linear PA driver IC, and AFRX5G372T4 Receive Module IC, which integrates a Low Noise Amplifier (LNA) and T/R switch. This circuit is designed for 3.4-3.6GHz operation/Band 42 radios, including CBRS, in 64T64R configuration (160W avg power at antenna).

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Key Attributes Value Search Similar
Minimum Frequency (GHz)
Maximum Frequency (GHz)
Psat (dBm)
P1dB (dBm)
TX Pout Avg at 10 dB PAR
TX Gain
RX Noise Figure
RX Gain
Max BW
Configuration 1x1 SISO

Other Attributes Value
Frequency Range (MHz)
Maximum Frequency (MHz) 3600
Minimum Frequency (MHz) 3400
Voltage (VDC) 28
Output Power (W) 3
Duplex Mode TDD

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Unit Price:
1:  $3,308.1000
10:  $3,221.0500
25:  $3,138.4600
50:  $3,056.1800
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