SEMIX303GB12E4P


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Semikron-Danfoss
Mfg #: SEMIX303GB12E4P
Richardson RFPD #: SEMIX303GB12E4P
Description: Power IGBT Transistor
Min/Mult: 1
Datasheet SEMIX303GB12E4P Data Sheet
EDA/CAD Models

Trench IGBT Modules

Features

  • Homogeneous Si
  • Trench = Trenchgate technology
  • VCE(sat) with positive temperature coefficient
  • High short circuit capability
  • Press-fit pins as auxiliary contacts
  • Thermally optimized ceramic

Typical Applications

  • AC inverter drives
  • UPS
  • Renewable energy systems


Key Attributes Value Search Similar
Configuration Half-Bridge
Voltage (V) 1200
Current (A) 300
Package Type SEMiX 3p

Other Attributes Value
Operating Voltage Range
Load Resistance (Ω) 0.68
Peak Braking Current (A) 1600
Maximum Operating Voltage (V) 690
Minimum Operating Voltage (V) 690

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